Aug 04, 2016
CrossBar ReRAM for IoT and Data Centers Featured at 2016 Flash Memory Summit in Executive Keynote and Panel Presentations
CrossBar, Inc., the ReRAM technology leader, announced today that its Founder and CEO George Minassian will keynote at the upcoming Flash Memory Summit at the Santa Clara Convention Center in Santa Clara, Calif. CrossBar’s Dr. Wei Lu, Chief Scientist and Co-founder is also featured in a separate session during the event.
Sep 14, 2015
CrossBar Closes Series D Funding of $35 Million
CrossBar, Inc., the Resistive RAM (ReRAM) technology leader, today announced it has completed a $35 million Series D funding round. Tyche Partners, Oriza Holdings and Cheerful Link joined all of CrossBar’s existing investors in the round, bringing total investment to $85 million to date. CrossBar plans to use the funds to continue the commercial ramp of its game-changing non-volatile (NVM) memory technology.
Dec 15, 2014
CrossBar Unveils Another Breakthrough Innovation Behind its Ultra-High Density 3D ReRAM Solutions at IEDM 2014
Achieving another major milestone needed to bring terabyte storage-on-a-chip to market, CrossBar, Inc., a start-up company pioneering 3D Resistive RAM (ReRAM) non-volatile technology, today disclosed it has solved one of the greatest challenges facing developers in achieving ultra-high density ReRAM. In a technical presentation at today’s IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, the company unveiled its approach to suppressing the sneak path current that interferes with reliable reading of data from individual memory cells, one of the most challenging hurdles ReRAM developers are currently facing. Without the ability to suppress this sneak path current, ReRAM developers are unable to deliver the high-density 3D memories arrays needed to make terabyte storage-on-a-chip possible.
Dec 08, 2014
CrossBar to Demonstrate Breakthrough Resistive ReRAM Innovation at IEDM 2014
CrossBar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will be disclosing another major technology breakthrough in their development of Resistive RAM (ReRAM) at next week’s IEEE International Electron Devices Meeting (IEDM). Continuing to meet key technological milestones, the company first unveiled its ReRAM technology in August 2013 and then demonstrated pre-production 1MB arrays using CrossBar’s patented “1TnR” technology for read/write operations in June 2014.