Aug 13, 2013
CrossBar to Present Newly-Unveiled ReRAM Technology at Flash Memory Summit 2013
Speaking at an industry conference for the first time, CrossBar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will present at Flash Memory Summit on Wednesday, August 14, 2013, in Santa Clara, CA. Vice President of Engineering and co-Founder Hagop Nazarian, will speak about the company’s Resistive RAM (ReRAM)-based technology, creating a new generation of non-volatile memory. CrossBar’s ReRAM is capable of storing up to one terabyte (TB) of data on a single 200mm2 chip, and its structure is simple enough to stack onto logic in 3D on the latest technology node, using standard CMOS processes, in existing fabs.
Aug 02, 2013
CrossBar Emerges from Stealth-Mode; Unveils CrossBar ReRAM Non-Volatile Memory Technology
Emerging from stealth-mode today, CrossBar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, unveiled its CrossBar Resistive RAM (ReRAM) technology. This new generation of non-volatile memory will be capable of storing up to one terabyte (TB) of data on a single 200mm2 chip, enabling massive amounts of information, such as 250 hours of HD movies, to be stored and played back from an IC smaller than a postage stamp. CrossBar today also announced it has developed a working CrossBar memory array at a commercial fab, a major milestone in the development of new memory technology, signaling its readiness to begin the first phase of productization.