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2018年1月2日
The best emerging storage tech of 2017
Storage technology is evolving faster than any time in the last 40 years. Here are Robin Harris’ picks for the best technologies to emerge in 2017.
2017年11月12日
EE Times Silicon 60: Startups to Watch
Crossbar listed for the fourth consecutive year.
2017年10月26日
Delivering 1 GIOPS Per Server with ReRAM

Contributed article by Sylvain Dubois.

2017年9月27日
Partnership Puts ReRAM in SSDs
Mobiveil Inc. and Crossbar Inc. recently announced they are collaborating to use resistive random access memory (ReRAM) in an SSD.
2017年9月12日
ReRAM: Will New Memory Device Replace Flash?
Keep an eye out for Resistive Random-Access Memory (ReRAM), an up-and-coming type of computer memory technology.
2017年9月11日
Crossbar aims to bury Intel's 3D XPoint with superior technology
Think Intel’s 3D XPoint is the only resistance RAM (ReRAM) game in town? Think again. Crossbar’s ReRAM is superior in almost every respect - and it’s going into production this year.
2017年9月11日
Crossbar Is Developing A ReRAM Solution That Could Trump Intel's 3D XPoint Technology
Remember the name Crossbar, in case you are not already familiar with the firm. Founded in 2010, Crossbar has designed a ReRAM (resistive random-access memory) solution that could give Intel and its 3D XPoint technology developed in collaboration with Micron a run for their money.
2017年8月29日
Q&A: Refined ReRAM Enters the Storage Wars
Technology Editor Bill Wong talks with Crossbar’s Sylvain Dubois about how the company is rethinking storage innovation in IoT, AI, mobile computing, and data centers.
2017年8月21日
Four Flash Trends Influencing Tomorrow's All-Flash Arrays
Many companies announced innovative products and technical advances at last week’s 2017 Flash Memory Summit that give enterprises a good understanding of what to expect from today’s all-flash products today as well as a glimpse into tomorrow’s products.
2017年8月18日
Flash Memory Summit Survives the Fire
Putting out the fire at this year’s Flash Memory Summit did not dampen the enthusiasm for the latest storage technology trends.
2017年8月4日
It's Once Again Time For Your Enterprise Storage Salmagundi of the Week
Bits and bytes from across the industry rounded up in one handy spot.
2017年8月2日
New Storage Options Dominate Flash Memory Summit
Check out some of the latest storage technology making its way to the 2017 Flash Memory Summit.
2017年7月17日
A New Memory to Enable Ultra Low Energy Devices

Contributed Article by Sylvain Dubois

ReRAM solutions can enable radical innovations in the connected IoT device world.

2017年6月30日
ReRAM Goes 3D
Resistive random-access memories (ReRAMs) are a new breed of “universal” memory that could replace all other types, offering the speed of RAM but with the density and non-volatility of flash.
2017年6月22日
Evaluating ReRAM Technology Choices for Cloud and Data Center Applications

Contributed Article by Sylvain Dubois

Resistive random-access memory (ReRAM) is the next promising memory technology in the race to develop more scalable, high-capacity, high-performance, reliable storage solutions.

2017年5月25日
Memristor Image Processor Uses Sparse Coding to See
Researchers led by Crossbar co-founder Wei Lu at the University of Michigan have designed hardware specifically to run brain-like “sparse coding” algorithms.
2017年3月2日
A Memory Chip That Can Compute
A group of researchers working in Singapore and Germany think they have found a way to make a single chip work as both a processor and a memory.
2017年2月15日
Memristor Research Highlights Neuromorphic Device Future
Crossbar co-founder and University of Michigan professor Wei Lu focusing on memristors that can act like synapses to build computers that act like the human brain and drive machine learning.
2017年2月10日
Cutting IoT power consumption with embedded ReRAM

Contributed Article by Crossbar’s Sylvain Dubois

If the variety of new connected devices uploading gigabytes of data to the cloud is any indication, the Internet of Things (IoT) will continue to create a greater demand for improved memory technology performance and power efficiency.

2017年1月25日
New Embedded Memories Ahead
The embedded memory market is beginning to heat up, fueled by a new wave of microcontrollers (MCUs) and related chips that will likely require new and more capable nonvolatile memory types.
2017年1月17日
Crossbar ReRAM chases terabyte non-volatile memory
California-based start-up Crossbar, a developer of non-volatile resistive RAM (ReRAM) based on silver-over-amorphous-silicon technology, has kept its promise to be in production in 2016.
2017年1月16日
Prepare for ReRAM speed! Crossbar samples SMIC chips
ReRAM startup Crossbar has sample embedded ReRAM chips from SMIC that are currently undergoing evaluation.
2017年1月16日
Crossbar sampling ReRAM
Crossbar, the six year-old ReRAM specialist with $80 million VC backing, is sampling embedded 40nm ReRAM from SMIC and expects to have 28nm technology available in H1.
2017年1月12日
Crossbar ReRAM in production at SMIC
Crossbar Inc., a developer of non-volatile resistive RAM (ReRAM) based on silver-over-amorphous-silicon technology, kept its promise to be in production in 2016.
2016年12月27日
Memory Chips in Data Centers: Something’s Gotta Give
Some of the biggest semiconductor companies in the world are in a race to build a new generation of memory chips, and the stakes couldn’t be higher.
2016年12月21日
Foundries See Mixed Future
Several foundries are working with various customers on the next-generation memory types, such as FRAM, MRAM, ReRAM and even carbon nanotube RAMs.
2016年11月30日
Memory-Centric SoCs and AI

Contributed Article by Crossbar’s Sylvain Dubois

What can be realized as high-performing and low-power memory-centric SoCs pair with IoT devices and cloud-based servers?

2016年11月4日
ReRAM Redux
Crossbar expects they should be able to scale up to terabits per die. If they are right, this could be a real game-changer for non-volatile memory, both in embedded and mass storage applications.
2016年11月3日
10 Intriguing Technologies from ARM TechCon
Crossbar has been developing a non-volatile RAM technology based on the anti-fuse behavior of amorphous silicon that it calls resistive RAM (ReRAM). That development is now paying off, according to company vice president Sylvain Dubois, with the technology reaching commercialization.
2016年9月22日
Sorting Out Next-Gen Memory
Semiconductor Engineering takes a look at the status of the new memory types including Crossbar ReRAM.
2016年9月19日
Crossbar named to the EE Times “Silicon 60: 2016’s Startups to Watch”
EE Times has selected 25 startup companies for version 17.1 of its list of 60 firms that they feel are worth keeping an eye on. The selection is based on the consideration of a mix of criteria including: technology, intended market, financial position and investment profile, maturity and executive leadership.
2016年8月23日
Hyperconverged Infrastructure Virtualization with ReRAM

Contributed Article by Crossbar’s Sylvain Dubois

Hyperconverged applications require multi-million IO/s storage performance due to the intensive I/O workload. New technologies such as ReRAM are coming into the market that will slash latency to less than 10μs, resulting in new products.

2016年8月17日
Monolithic embedded ReRAM presents challenges, opportunities

Contributed Article by Crossbar’s Sylvain Dubois

ReRAM can be manufactured with the same CMOS process node in the same manufacturing foundry used today by logic circuitry. This manufacturing convergence, together with other unique features of ReRAM technology, is making 3D monolithic integration of massive amounts of storage-class memory and logic circuitry possible for the first time.

2016年8月3日
Powering the future Internet of Things

Contributed Article by Crossbar’s George Minassian

ReRAM solutions can enable radical innovations in the connected IoT device world.

2016年4月26日
1T-MONOS is being proposed as a solution for applications where flash hasn't previously been embedded
While MONOS is looking to provide a better version of flash, other companies are looking to develop alternatives. One is Crossbar, which is backing resistive RAM (ReRAM).
2016年4月20日
Everspin’s MRAM shoots for the NVM crown
While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM), they are not alone in bringing new NVM tech to market. Crossbar is another promising technology.
2016年3月14日
SMIC to produce ReRAM
SMIC is to manufacture Crossbar’s Resistive Random Access Memory (ReRAM) for embedded applications like MCUs.
2016年3月14日
Future memories continue to occupy our minds
Author Graham Pitcher covers Crossbar’s SMIC deal, stating that there is large demand for next generation memory and a race to be the company that satisfies the demand.
2016年3月11日
ReRAM vendor inks deal with semi foundry
Crossbar announces a licensing deal with the Chinese Semiconductor Manufacturing International Corporation that will help move the needle on ReRAM.
2016年3月11日
Crossbar Licenses ReRAM IP to China’s SMIC
Crossbar Inc., a developer of resistive random access memory (ReRAM) technology, will provide China’s leading silicon foundry with blocks of intellectual property to license to customers under the terms of a strategic partnership.
2016年3月3日
Non-volatile memory is the next frontier
2015年12月15日
The Commercialization of 3D Stackable Memory - Part Two: The Opportunities for ReRAM Cells to Take 3D Memory to 8-nm Nodes
Crossbar’s Sundar Narayanan examines the advantages inherent in resistive memory technology over current NAND technology in taking 3D memory on a familiar and reasonable cost curve to 8-nm technology nodes.
2015年12月8日
The Commercialization of 3D Stackable Memory - Part One: The Challenges of Manufacturing 3D Stackable Memory
Crossbar’s Sundar Narayanan look at the challenges that need to be overcome in manufacturing 3D stackable memory using today’s competing technology approaches.
2015年11月16日
ReRAM Gains Steam
New memory finds a lucrative niche between other existing memory types as competition grows.
2015年10月1日
The global next generation memory market that is expected to reach USD 3.43 billion by 2020 scrutinized in new research
Increasing need for fast and economical storage solutions across diverse applications is estimated to drive market growth and Crossbar is identified as a key player.
2015年9月15日
Crossbar raises $35 million for ReRAM roll out
Resistive RAM startup Crossbar Inc. has announced it has completed a $35 million Series D funding round. This brings the money raised by the company since its foundation in 2010 to $85 million.
2015年9月14日
Startup raises $35M to challenge flash chip market
Crossbar raised $35 million in Series D funding this week as it ramps up sales of chips it says could disrupt the $60 billion flash memory market. The Santa Clara company, led by co-founder and CEO George Minassian, says it can fit a terabyte of data on a postage stamp-sized chip that is 20 times faster than the best flash memory.
2015年9月8日
Crossbar named to the EE Times “Silicon 60: 2015's Startups to Watch”
The selection of the 60 companies in the latest Silicon 60 is based on a mix of criteria including: technology, intended market, financial position, investment profile, maturity and executive leadership. They are emerging companies to follow.
2015年5月7日
3D NAND, MRAM, ReRAM: Emerging opportunities and challenges for the changing memory market
Crossbar Co-founder and chief scientist Wei Lu says the company plans to deliver its ReRAM technology to strategic partners as an IP block for embedded non-volatile memory on logic chips from a leading-edge manufacturing foundry by the end of the year.
2015年4月21日
Machine Dreams
Combining memory and storage isn’t a new idea, but there hasn’t yet been a nonvolatile memory technology fast enough to make it practical, says Tsu-Jae King Liu, a professor who studies microelectronics at the University of California, Berkeley. Liu is an advisor to Crossbar, a startup working on a memristor-like memory technology known as resistive RAM.
2015年3月27日
Intel, Micron & Toshiba tout faster, cheaper flash
The prospect of exponentially larger flash memory is enticing, but that doesn’t mean the technology won’t one day be surpassed. A number of companies are looking to build alternatives to flash, including IBM with its phase change memory (PCM) and a startup called Crossbar that’s hoping to use Resistive RAM (ReRAM) to build chips with up to 1TB of storage.
2015年3月26日
Storage that's both fast and roomy? It's on the way
Good news for laptop and smartphone buyers: a novel flash-memory design should cut costs and boost capacity.
2015年3月18日
A day may come when flash memory is USELESS. But today is not that day
However sometime in the 2020s it will be. What then?
2015年2月23日
"Sneak Path" Breakthrough Heralds Arrival of Ultra-High Density Resistive Memory
2015年1月22日
Are new non volatile memory technologies about to enter the main stream applications… and change the supply chain?
Yole Development decided to publish the interview from Crossbar to announce their new report “Emerging Non Volatile Memory (NVM) Technology & Market Trends”.
2014年12月15日
A terabyte on a postage stamp: ReRAM heads into commercialization
The makers of a new non-volatile RAM said the memory is ready to move from a prototype to a fabrication facility, where 1TB chips the size of a postage stamp will be produced and tested. Silicon Valley start-up Crossbar expects some of its 3D Restive RAM (3D ReRAM) products to be out in 2016 as memory in wearable devices, with high-density storage devices like solid-state drives arriving within 18 months after that.
2014年12月15日
Crossbar to commercialize its ReRAM facilitating terabyte of storage on the size of a postage stamp
Crossbar, the makers of new non-volatile RAM said that their new memory is ready to move from a prototype to a fabrication facility, where 1TB chips the size of a postage stamp. The Silicon Valley start-up expects that its 3D resistive RAM or shortly called as 3D RAM, will be out in early 2016 as memory in wearable devices, with high-density storage devices like solid-state drives arriving within 18 months after that.
2014年12月15日
Crossbar gets around a nasty obstacle to dense 3D memory chips
Creating 3D memory chips isn’t too hard. But packing the memory cells so they contain a lot of dense storage is a problem that has bedeviled chip makers for a while. But memory chip startup Crossbar says it has figured out a way to create 3D structures with a lot of densely packed circuitry. The result could be memory chips that can store a ton of data in a very small space. Santa Clara, Calif.-based Crossbar disclosed what it called a breakthrough innovation at the 2014 International Electron Devices Meeting in San Francisco today. It will enable high-density storage with faster response times and lower power consumption. As such, it could be useful in everything from data centers to smartphones.
2014年12月15日
"Sneak Path" Breakthrough Heralds Arrival Of Ultra-High Density Resistive Memory

Contributed Article by Crossbar’s Sung Hyun Jo, Ph.D.

As floating-gate flash memory technologies used in the majority of products on the market today quickly approach the limits of their ability to scale to higher densities, it has become widely recognized that a new non-volatile memory technology is needed to replace them. Resistive random-access memory (ReRAM) is widely hailed as the “most likely to succeed” in the race to replace today’s flash memory with a new, more scalable, higher-capacity, higher-performance and more reliable non-volatile memory. While many companies are actively pursuing ReRAM technologies, however, the road to creating commercially viable ReRAM products has not been easy.

2014年12月15日
Crossbar breaks 3D storage barrier
3D is the memory chip buzzword du jour, because reducing feature sizes is expensive, while stacking memory cells up is much less so. Fabs can use older, stable processes to build larger capacity chips with less technical risk. Samsung has announced products using their 3D flash. But NAND flash is not the only memory technology that can benefit from 3D economics. Where speed and reliability are critical various forms of Resistance RAM (ReRAM or ReRAM) are starting to make inroads. Crossbar, a venture-backed startup in Silicon Valley, is pushing the 3D bandwagon even further.
2014年12月15日
Crossbar Demonstrates Breakthrough Resistive ReRAM at IEDM 2014
Start-up company Crossbar announced today at IEEE International Electron Devices Meeting (IEDM) a breakthrough in 3D ReRAM architecture that could allow the development of a 1TB ReRAM memory chips that have the size of a postage stamp. Presented by Dr. Sung Hyun Jo, Crossbar senior fellow, the presentation discussed how to overcome a common design challenge in high-density ReRAM development, and described how a Field Assisted Superlinear Threshold (FAST) selector device can successfully suppress the sneak path current inherent in ReRAM memory, another milestone needed to commercialize ReRAM memory for high-density data applications.
2014年10月14日
Manufacturing ReRAM: Challenges & Opportunities

Contributed Article by Sundar Narayanan, Crossbar

Resistive memory technologies involving simple two-terminal devices can be integrated into backend metal layers to provide an elegant solution for meeting density, capacity, and cost challenges.

2014年9月28日
Seeking Alpha: Memristor To The Rescue?

By Chris Burniske, ARK Analyst

Imagine carrying the contents of your computer on a postage-stamp sized chip. Crossbar, a new Silicon Valley startup, is promising to deliver just that before 2020 using a new technology called resistive random-access memory (ReRAM).

2014年8月17日
Emerging Solid State Storage And Higher Endurance Flash

By Tom Coughlin

2014年7月15日
EE Times Silicon 60: Hot Startups to Watch

By Peter Clarke

It has been more than 18 months since EE Times last produced a version of the Silicon 60. The global economic, entrepreneurial, and electronics business climates have all improved in that time, and EE Times has brought 38 recently formed companies on to version 15.1 of its list of 60 firms that we feel are worth keeping an eye on.

2014年7月2日
Crossbar ReRAM Tweaks Nonvolatile Memory

By Jim Turley

I gotta say, memory chips are boring.

And that’s coming from a guy who lives and works in the chip business. Sure, I can get all excited about microprocessor chips. I can generally keep my eyes open through a discussion of interface chips. I’ve even been known to nod occasionally when the topic turns to cryptography chips. But memory? Give me some toothpicks for my eyelids.

2014年7月2日
Crossbar preps ReRAM tech for 1TB

By Janine Love

Crossbar has recently demonstrated pre-production 1MB arrays using its patented 1 transistor driving n resistive memory cells (1TnR) non-volatile resistive RAM (ReRAM or ReRAM) for read/write operations. The company feels this is a major milestone toward commercialising terabyte-scale memory arrays on a postage-stamp-sized chip.

At its basic level, ReRAM includes a layer of electrically insulating active material between two electrodes. Applying voltage results in the formation of a conducting filament between the two electrodes (or metal layers). Applying reverse voltage then removes the filament.

2014年7月1日
New research: Flash is DEAD. Yet resistance isn't futile - it's key

By Chris Mellor

Flash is at a crossroads. It cannot keep shrinking dies because, beyond a certain point, NAND cells produce too many errors, are slower to respond and have a shortened working life. Yet a University of Michigan professor’s research may hold the key to the future of flash storage technology.

Flash foundry suppliers are working on vertical layer stacking to cram more cells at current geometries onto the same die footprint. This is exemplified by Samsung’s V-NAND.

2014年7月1日
Crossbar ReRAM Aims for 1TB

By Janine Love

Yesterday, Crossbar announced it had demonstrated pre-production 1 megabyte arrays using its patented 1TnR (1 transistor driving n resistive memory cells) non-volatile resistive RAM (ReRAM or ReRAM) for read/write operations. The company feels this is a major milestone toward commercializing terabyte-scale memory arrays on a postage-stamp-sized chip. Last week, I spoke to Dr. Tanmay Kumar, vice president of device engineering at Crossbar, about the latest developments.

2014年6月30日
Crossbar’s Resistive RAM claims milestone, but future ship date remains unclear

By Carol Sliwa

Many enterprises are still getting a handle on the best ways to use NAND flash, but they can already scope out some of the potential successors to the solid-state storage technology.

Crossbar Inc. specializes in non-volatile 3D Resistive RAM (ReRAM), which promises greater endurance and higher density than NAND flash. The Santa Clara, California-based startup claims that it reached an important milestone toward commercializing terabyte-scale memory arrays that can use a chip the size of a postage stamp.

2014年6月30日
Flash storage faces challenge from Crossbar's ReRAM

By Agam Shah

The hunt for memory technology to replace NAND flash storage within the next 10 years is under way, and startup Crossbar is planning to bringing its version of ReRAM (resistive random-access memory) technology to market next year. ReRAM, a form of nonvolatile memory that is not available commercially yet, will be cheaper, smaller and more power-efficient than NAND flash, which is being used in solid-state drives and mobile flash drives, said Tanmay Kumar, vice president of device engineering at Crossbar.

2014年6月30日
Crossbar's new ReRAM tech challenges flash storage

By Agam Shah

The hunt for memory technology to replace NAND flash storage within the next 10 years is under way, and startup Crossbar is planning to bringing its version of ReRAM (resistive random-access memory) technology to market next year. ReRAM, a form of nonvolatile memory that is not available commercially yet, will be cheaper, smaller and more power-efficient than NAND flash, which is being used in solid-state drives and mobile flash drives, said Tanmay Kumar, vice president of device engineering at Crossbar.

2014年6月30日
Crossbar shows ultra-dense ReRAM architecture

By Robin Harris

Crossbar, the resistance RAM (ReRAM) startup, opened the kimono a little wider today with the announcement of their “1TnR” architecture, which they have implemented on pre-production test chips.

Unpacking 1TnR: 1 Transistor drives n number of ReRAM cells. How many? They report that a single transistor can drive over 2,000 memory cells at very low power and super density.

2014年6月30日
Crossbar Has 1Mb ReRAM

By David Manners

Crossbar, the four year-old Santa Clara resistive RAM (ReRAM) start-up, has demonstrated pre-production 1Mb arrays. The array uses Crossbar’s using its patented “1TnR” (1 Transistor driving n Resistive memory cells) technology which makes it possible for a single transistor to manage a very large number of interconnected memory cells, enabling very high capacity solid-state storage.

Other memories utilising passive cross-point architectures, such as Resistive RAM, PCM (Phase Change Memory) and neuromorphic systems, experience unintended electrical current when accessing high density storage due to “sneak path current.” .

2014年6月30日
Addressing Scheme Enables Terabyte Memories, Says Crossbar

By Peter Clarke

Resistive RAM startup Crossbar Inc. (Santa Clara, Calif.) has announced it has demonstrated the viability of its so-called 1TnR selector circuit for read/write operations.

1TnR uses a single select transistor to access a number of interconnected memory cells, enabling high capacity solid-state storage, Crossbar said. Crossbar has used to the technique to access up to 2,000 memory cells and intends to use the technology to create terabyte non-volatile memories on a single chip. The 1TnR ReRAM has been validated in silicon using a 1 Megabyte storage device for embedded code applications, the company said.

2014年4月15日
Nano-particules to the rescue for handling zettabytes of data

Contributed Article by Sylvain Dubois, Crossbar

2014年4月9日
Overcoming Challenges in 3D Architecture Memory Production

Contributed Article by Sundar Narayanan, Crossbar

2014年4月8日
Crossbar - Pioneering a New Type of Memory

Contributed Article by George Minassian, Crossbar

2014年2月11日
ReRAM: A New Approach to Embedded Memory

Contributed Article by Sylvain Dubois, Crossbar

2014年1月7日
Electronics 360: 10 Startups to Follow in 2014
2014年1月6日
New chips promise faster computing

New computer chips that have instant-on capabilities found in tablet devices but also provide higher performance, will change the way people use personal computers, according to an industry analyst.

Continuing research in solid-state technologies are leading to the development of so-called magnetoresistive random access memory (MRAM) and resistive random access memory (ReRAM) chips that offer many advantages over conventional DRAM (dynamic random access memory) chips, according to Tom Coughlin, founder of Coughlin Associates, a data storage consulting firm.

DRAM chips store data using an electrical charge in each memory cell. Capacitors used in DRAM chips lose their charge over time and memory assemblies using DRAM must refresh all the cells in their chips approximately 20 times per second. As DRAM cell decrease in size their need to refresh increases.

2014年1月5日
New types of RAM could revolutionize your PC

New chips that blur the line between computer memory and storage are starting to move beyond niche applications and could change how we use PCs, an industry analyst said Sunday.

The chips would enable the same instant-on capability that’s common on tablets, but at much higher performance, said Tom Coughlin, founder of Coughlin Associates.

“We’re seeing the development of new solid-state storage technologies that are starting to play a role,” he said. “MRAM is one that we’re seeing playing a role providing a non-volatile memory technology, and there’s some talk about resistive RAM doing some things.“.

2013年12月9日
Top five solid-state flash storage news stories of 2013

What better to describe 2013 than “The Year of Flash”? This topic generated many of the year’s top storage news stories, from advanced technology announcements to market changing acquisitions.

And that trend looks as if it will continue in 2014 as we move beyond the question of “Should I use flash in my data center?” to “Where should I use flash in my data center?” and “What kind of flash should I use?”

Analyzing the almost staggering amount of activity around flash during the past year, we’ve culled our top five flash story lines from 2013.

2013年12月4日
Apple Should Secure This Memory Technology Before Its Competition Does

What if I told you there was a non-volatile memory technology available that could fit one Terabyte “TB” of storage on a single chip smaller than a postage stamp, was 3D stackable for multiple Terabytes of storage, had 20x faster write speeds than NAND flash with 20x lower power consumption and 10x the durability. What if this memory technology was CMOS compatible making it relatively easy to manufacture at current foundries, had been successfully fabbed at a large commercial foundry, and was nearly ready for commercialization?

You would probably ask me for the ticker symbol and buy shares!

Well that technology is actually here, it is called Resistive Random Access Memory “ReRAM,” and it is being developed by a private company called Crossbar, Inc. (sorry no ticker). The thesis for this article is Apple (AAPL) should buy Crossbar Inc. and secure the technology to drive increased demand and improved margins around Apple’s iPads, iPhones, and iPods and to keep it out of its competitors’ hands.

2013年12月4日
What Apple Should Buy Next: Crossbar Inc.

With Apple’s big, fat piggy-bank flushed with cash it could easily buy up some of the biggest companies on the planet. So far, however, Apple’s cash has been used to by smaller companies like its recent purchases of PrimeSense and Topsy , but as great as those two companies are SeekingAlpha is advising that there is one company that it should really buy and I agree totally. That company is Crossbar, a company in the memory chip business and boy-oh, boy is this one company to remember. Crossbar has created a new and unique memory chip that blows everything else out of the water and one that could give Apple devices huge competitive advantages over its competition.

For one thing Crossbar’s new non-volatile memory technology chips can pack a whopping terabyte of data in the size of a bloody postage stamp! Not only that but its stackable so you could have oodles of memory in a small fraction of the space than current technologies can.

2013年11月26日
The drive for SSDs: What’s holding back NAND flash?

Contributed Article by Hagop Nazarian and Sylvain Dubois, Crossbar

2013年9月20日
CBS: Bay Area Company’s Chip Promises Big Leaps In Storage, Battery Life

By Allen Martin

SAN FRANCISCO (KPIX 5) — A tech company based in the Bay Area is on the verge of introducing a chip that could solve the biggest problems of today’s gadgets.

2013年9月19日
What’s After 3D NAND?

By Mark LaPedus

Planar NAND flash memory is on its last scaling legs, with 3D NAND set to become the successor to the ubiquitous 2D technology. Samsung Electronics, for one, already has begun shipping the industry’s first 3D NAND device, a 24-level, 128-gigabit chip. In addition, Micron and SK Hynix shortly will ship their respective 3D NAND devices. But the Toshiba-SanDisk duo are the lone holdouts, as the joint venture partners will extend planar NAND as long as possible before rolling out a 3D NAND device in 2016.

2013年9月18日
Silver Finds New Niche in Memory Storage Market

By Charlotte McLeod - Exclusive to Silver Investing News

If you’re a true silver buff, you likely know all about the metal’s long history as a component of health-related applications. Likewise, if you’ve been watching the silver market for the past few months, you’re likely aware that, moving forward, new solar power initiatives may play a role in driving silver prices. What you may not know about is silver’s up-and-coming use as an ingredient in memory storage devices.

2013年9月17日
ReRAM Challenges Flash Storage

By William Wong

Crossbar’s resistive RAM (ReRAM) joins magnetic and phase-change non-volatile memory technologies that are competing against the entrenched flash storage market. It will have lots of competition, but ReRAM’s features may put it ahead of the pack.

2013年9月12日
Storage Tech to Look Out For
Last month we saw some major developments in two storage technologies - Vertical NAND (V-NAND) and Resistive RAM (ReRAM) - which have the potential to change the way we view storage. We currently have two choices - spinning mechanical hard drives and flash based solid state drives (SSD). The spinning hard drives still offer the best cost per GB as compared to flash-based SSDs, but each of these technologies come with their own set of issues. Hard drives lack the speedy access times and low-power goodness offered by an SSD. The only way to currently get the best of both worlds - lower cost per GB and fast access times - is to invest in a hybrid .drive. But as far as SSDs are concerned, while the costs may have come down, they are still grappling with their own set of issues.
2013年9月5日
New Non-Volatile Memory for a New Era; Crossbar Announces their ReRAMs
Let’s take ourselves back a few centuries, to a time when technology is rather more rough and ready. We still have silicon to work with, but no semiconductor fabs. And yet, being the aggressive can-do species that we are, we decide we want to build a large-scale non-volatile memory.
2013年8月30日
Big VC funding and new technology makes enterprise storage sexy. Really!

By Fritz Nelson

Crossbar is one of the more interesting companies betting on ReRAM. The company’s CEO George Minassian says one of ReRAM’s benefits is simplicity, because most chip fabs have the readily-available material to make them, and the architecture promises more upside, including greater reliability at smaller chip lithographies. Whereas traditional flash memory uses electrons to trap a charge, ReRAM uses metal ions. In the case of Crossbar, that metal is actually silver.

2013年8月28日
ReRAM – The End of NAND Flash
For over 50 years, both computers and mobile devices have depended upon NAND Flash as a memory module. It’s high time it had a much needed replacement.
2013年8月27日
U Michigan Startup Develops ReRAM Prototype for Faster, More Efficient Mobile Device Memory
Crossbar, a University of Michigan (U-M) startup, has developed a working prototype of an advanced data storage technology that could revolutionize memory for mobile devices.
2013年8月26日
SSDs maturing, but new memory tech still 10 years away
Solid-state drive adoption will continue to grow and it will be more than 10 years before it is ultimately replaced by a new memory technology, experts said.
2013年8月25日
NAND Flash, What Comes Next?
The recent Flash Memory Summit in Santa Clara included some notable announcements.
2013年8月23日
Getting back to Basics: a Look at 3D NAND and 3D DRAM
There’s been a lot of buzz around 3D NAND in the past few weeks, sparked by Samsung’s recent announcement that it was commercializing its 3D VNAND technology.
2013年8月22日
DARPA invests $5.7 million in neural image processor research

By R. Colin Johnson

Wei Lu is also a cofounder of Crossbar Inc. (Santa Clara, Calif.), which uses migrating silver ions in amorphous silicon to create resistive random access memories (ReRAM). But for his DARPA contract, instead of silver, he is casting his memristors in tungsten oxide, which changes its resistance as oxygen vacancies migrate from one end of the memristor to the other — depending on which way the current is flowing — thus acting as a resistance-based memory element.

2013年8月21日
Will ReRAM Replace Flash?
Flash occupies a unique position in the history of storage. Just as we’re getting a good handle on how to take full advantage of the stuff, people are already saying we have just a few years before the chip boffins will have shrunk flash as much as they can and we’ll have to find a replacement. The folks at Crossbar have their money on resistive random-access memory (ReRAM).
2013年8月20日
ReRAM: The Coming Alternative to Flash Memory
Michael J. Miller’s Forward Thinking
2013年8月20日
DARPA Funds Neural Image Processor
Processing images 1,000-times faster using brain-like neural-network chips is the four-year goal of a $5.7 million University of Michigan research project funded by the Defense Advanced Research Project Agency (DARPA).
2013年8月16日
Making Memories
Crossbar Unveils ReRAM.
2013年8月15日
The Changing Face Of Non-Volatile Storage
The Flash Memory Summit was host to a range of new technology, from LSI’s SandForce flash memory controllers utilizing a multi-level low-density parity check (LDPC) to the Hybrid Memory Cube (see “Hybrid Memory Cube Shows New Direction For High Performance Storage” at electronicdesign.com).
2013年8月14日
Growth Slows in IT Sector
Crossbar is sticking with more traditional manufacturing processes and they have a 1TB chip based on ReRAM (resistive RAM).
2013年8月14日
Flash Drives Semiconductor Technologies
Demand for NAND flash is said to be growing at 45% per year, driven mainly by the consumer market and by tablets in particular.
2013年8月14日
Denser, Faster Memory Challenges Both DRAM and Flash
A new memory technology can store a terabyte on a chip the size of a postage stamp.
2013年8月14日
Crossbar Announces its Resisitve RAM, a Nonvolatile Memory Technology
Crossbar Inc. last week announced the forthcoming release of what it claims is high-capacity and high-performance Crossbar Resistive RAM (ReRAM) technology.
2013年8月13日
Flash Memory Summit 2013 - 3D NAND Flash, EUV, Consolidation and More
The Eighth Annual Flash Memory Summit convenes this week at the Santa Clara Convention Center, Santa Clara, California. The hot topic focus this year is on 3D NAND-Flash and next generation non-volatile memories.
2013年8月12日
Pat Pilcher: Resistive RAM
Crossbar, a U.S. based tech company, has developed non-volatile memory technology that could spur the next wave of consumer electronics-gadgety goodness.
2013年8月12日
EDA/IP Weekly Roundup – Aug. 12, 2013
You may soon have a smartphone or tablet with more than a terabyte of high-speed storage.
2013年8月10日
High Profile NAND And Emerging Memories
The 2013 Flash Memory Summit (FMS) is happening on August 13-15, 2013 in Santa Clara California.
2013年8月9日
Could a New Smartphone Memory Chip Increase Battery Life? Crossbar ReRAM Says Yes!
New advances from a company called Crossbar promise to increase battery life via a new mobile memory chip. The chipset is meant to vastly improve the storage in mobile phones but Fast Company adds another advantage: better battery life.
2013年8月9日
What Would You Do with 384GB of Storage?
Internal storage, SD card, iCloud, Dropbox, Google Drive, Amazon Cloud… sounding familiar? They should, because these are just a few of the many ways that our phones collect and store all of our important information.
2013年8月9日
Resistive RAM (ReRAM) Squeezes 1TB on a Chip Smaller Than a Stamp
Most people have probably heard about RAM (Random-access memory), which lets you access any byte of memory without touching the preceding bytes, hence the random name. RAM is still the most common type of memory and you will find it in your computer, smartphone, tablet and many other electronics. Basically, it’s one of the features that are on the basis of the \$1.1 trillion electronics market.
2013年8月9日
Faster, More Powerful Mobile Devices: U-M Startup Crossbar Could Disrupt the Memory Market
The next generation of smartphones could be capable of storing 250 hours of HD video and carrying a charge for a week, thanks to an advanced data storage technology from a University of Michigan startup that could upend the memory market.
2013年8月9日
New Advances Could Help Upcoming Smartphones Last for Days per Charge
A startup called Crossbar unveiled a new type of mobile memory chip earlier this week and while it could drastically increase the amount of storage in mobile phones in the near future, Fast Company notes an added advantage: better battery life.
2013年8月9日
Crossbar's George Minassian Presents What Could Be the Future of Storage
George Minassian, co-founder and CEO of Crossbar, appeared on CNBC’s to talk about his flash memory disrupting technology, which increases storage in mobile devices.
2013年8月9日
Crossbar: Disrupting Flash Memory
Today, we introduce the technology that allows devices to have up to one terra byte capacity in the size of a postage stamp.
2013年8月9日
Resistive Ram Technology to Replace NAND?
US start up Crossbar has unveiled a scalable non volatile memory technology which it says will be capable of storing up to 1Tbyte of data on a 200mm2 chip.
2013年8月8日
RAM Wars: ReRAM vs. 3D NAND Flash, and the Winner is...Us
You may soon have a smartphone or tablet with more than a terabyte of high-speed storage.
2013年8月8日
Better, Faster, Smaller: How Resistive RAM Could Change Storage Forever
What if we told you that a terabyte of data can fit on something the size of a postage stamp? You’d think we’re crazy, right? Well, California-based startup Crossbar has done just that.
2013年8月7日
How Silicon Valley's Best-Kept Secret, Crossbar, Beat HP to the Market w/ReRAM
Even with the small size, high speeds, and power efficiency of NAND flash; modern mobile devices — from wearable electronics to smartphones — are demanding even better performance. In the race to find a successor to flash many are looking at resistive random access memory (ReRAM/ReRAM), a new form non-volatile memory (NVM) as a potential “front runner” in the race.
2013年8月7日
ReRAM Aims to Bring 1TB Memory to Mobile Devices
Is the 64 GB storage space on your Android smartphone still not enough to hold your data? California tech startup Crossbar might just a solution to this as they announced a new kind of memory chip that will soon be replacing the existing NAND type of chips.
2013年8月7日
'ReRAM': A Computer Chip That Could Keep Your Phone Charged for Weeks
Californian start-up Crossbar unveils new memory chip 20 times faster and using 20 times less energy than current tech.
2013年8月7日
New Storage Technologies Could Make Our Mobiles Faster; Meet ReRAM and 3DNAND
The performance provided by current storage technologies is being out stripped by CPU (SoC), memory, and even usage patterns of mobile device users. They are demanding more space, more speed and all with better power consumption.
2013年8月7日
Start-up Uncloaks Its ReRAM Non-volatile Memory Technology
Start-up memory company Crossbar Inc. recently uncloaked its Crossbar Resistive RAM (ReRAM) technology.
2013年8月7日
Flash Memory Could Be Replaced by ReRAM
A company claims it’s close to bringing resistive RAM (ReRAM), the tech touted to kill off Flash RAM, to the shops. Crossbar claims it has smashed the technical barriers that have stopped ReRAM from becoming a commercial reality.
2013年8月7日
Flash Killer? Crossbar Reveals New Disruptive Class of ReRAM
Start-up company Crossbar Inc. emerged from stealth mode on Tuesday to reveal a new class of Resistive RAM (ReRAM) technology that could potentially disrupt the NAND Flash industry.
2013年8月7日
Crossbar Unveils ReRAM Non-volatile Memory with 1TB of Storage
Crossbar has unveiled what it claims is the first commercially viable Resistive RAM (ReRAM) memory chip, a new generation of non-volatile memory capable of storing up to 1TB of data on a single 200mm2 chip.
2013年8月7日
Crossbar Startup Develops 1TB Resistive RAM Technology
Crossbar, a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, unveiled its Crossbar resistive RAM (ReRAM) technology.
2013年8月7日
Crossbar Claims High Capacity Memory Cuts a Dash as a Flash Replacement
Startup memory vendor Crossbar has unveiled a type of Resistive RAM (ReRAM) that can store up to one terabyte of data on a chip the size of a postage stamp, while reportedly offering twenty times the performance of existing flash memory.
2013年8月7日
20x schneller als NAND: Crossbar kündigt 'low-power' ReRAMs mit TByte-Kapazitäten an
2013年8月6日
Crossbar's ReRAM to Boast Terabytes of Storage, Faster Write Speeds Than NAND
Hardware makers often sing the praises of their latest and greatest flash memory, but the folks at Crossbar are ready to show them up with resistive RAM (ReRAM) that they’ve been quietly working on.
2013年8月6日
Tomorrow's Storage is Cheaper & Faster: 3D-Flash or ReRAM?
Evolution or revolution? Competing teams announced two new breakthroughs in solid-state storage yesterday. An established memory maker said it’s worked out how to vertically stack its flash storage chips, and a startup said it’s got a whole new technology. Both are said to be even faster and even more reliable than today’s super-speedy offerings.
2013年8月6日
Startup Heralds 1TB ReRAM Breakthrough
A small startup company claims it has made a breakthrough in the field of resistive RAM (ReRAM) which will lead to non-volatile mobile memory chips capable of holding 1TB of data.
2013年8月6日
Startup Crossbar Emerges from Stealth with ReRAM Memristor Memory That Could Beat HP to Market But Will Be Fighting Samsung Stacked Flash
Stealth startup Crossbar’s ReRAM technology will deliver 20x faster write performance; 20x lower power consumption and 10x the endurance at half the die size, compared to today’s best-in-class NAND Flash memory. Since it is CMOS-compatible, it can be easily integrated into existing fabs and processes without any special equipment or materials.
2013年8月6日
Resistive RAM: Terabytes of Storage, 20 Times Faster Than NAND
There’s never a shortage of new experimental forms of memory—but a company called Crossbar has now worked up something called resistive RAM which could wipe the floor with NAND.
2013年8月6日
Resistive RAM Provides 1TB on a Chip Smaller Than a Stamp
A Californian tech startup going by the name of Crossbar has announced a new kind of memory chip which can store 1TB of data in a space as small as a postage stamp.
2013年8月6日
Your 2015 Smartphone Could Have a Battery Charge of Several Weeks
A crazy type of RAM chip could fit tons more memory into smartphones, meaning they will consume less power. Combined with other innovations, it means your 2015 smartphone may run for weeks.
2013年8月6日
Resistive RAM Can Write 20x Faster Than NAND & Store 1 Tb On A Single Chip
Resistive RAM aka ReRAM is all set to kick the pulp out of NAND drives aka your regular flash drives. Crossbar, the chip maker that’s been in the stealth mode for a long time has come out of its shell with the ReRAM and it claims that it can store 1 Terabyte (Tb) of data on a single chip and can be scaled to store multiple terabytes using 3D stacking.
2013年8月6日
ReRAM Uncloaked as Super-Efficient Flash Killer
A start-up from the US has promised its memory chip technology is going to blow NAND-based Flash out of the water.
2013年8月6日
ReRAM Promises Faster, Cheaper and More Reliable SSDs
The company Crossbar announced it will start producing the first prototypes of restive memory, also known as ReRAM.
2013年8月6日
Next Gen Smartphones Could Have Terabytes of Internal Storage
A California-based startup, Crossbar Inc, has come up with a non-volatile memory technology that could change the way we store data on our smartphones, tablets, and other computing devices.
2013年8月6日
New Resistive RAM Crams 1TB of Data Into a Space Smaller Than a Stamp
California-based start-up, Crossbar Inc., has just dived onto the storage radar with a totally new way of storage technology which they’re calling “Resistive RAM” or ReRAM.
2013年8月6日
New ReRAM Tech Bridges Performance Gaps Between DRAM + Flash
Crossbar, the Santa Clara startup, recently announced a game-changing new memory chip that has the potential to replace flash memory in a number of applications.
2013年8月6日
New ReRAM Memory Promises a Terabyte of Storage On a Stamp-sized Chip
Californian start-up Crossbar unveiled new chip twenty times faster than previous flash storage.
2013年8月6日
New Memory Could Boost Smartphone Storage and Battery Life
A technology company has created a new kind of memory chip that can store up to a terabyte of data while writing faster and using less power than current storage.
2013年8月6日
Crossbar Unveils ReRAM with Whopping 1TB Memory
Crossbar has silently gone on to reveal a new piece of technology that is gearing up to challenge the dominance of NAND drives.
2013年8月6日
Crossbar Unveils ReRAM Non-Volatile Memory Technology
Startup company Crossbar emerged from stealth mode on Monday to announce a first of its kind memory chip it says will replace flash memory and enable a surge of innovation for consumer, enterprise, mobile and industrial applications.
2013年8月6日
Resistive RAM Crams 1TB Onto Tiny Chip
Flash memory could soon be a thing of the past, according to one company that claims it’s close to bringing resistive RAM (ReRAM) to the market.
2013年8月6日
Crossbar's ReRAM Could Disrupt Flash Memory Market
Flash memory runs the world right now. It’s a \$60 billion market at the heart of virtually all electronics. Thanks to Crossbar’s resistive RAM technology, though, Flash may soon be a fading memory (pun intended).
2013年8月6日
Crossbar’s Radical New Memory Technology
Crossbar, Inc. has come out of stealth mode with a fascinating new alternative memory technology. Furthermore, the company says that a working memory array has been produced at a commercial fab.
2013年8月6日
Crossbar ReRAM Set to Revolutionize Data Storage
Flash memory is a massive market in the mobile industry, a \$60 billion market to be precise. It’s used in virtually every handheld electronic device, from cameras to tablets, but yesterday Crossbar announced its new type of memory chip which could replace the traditional flash memory that we’re all so familiar with.
2013年8月6日
Crossbar ReRAM Promises to Beat NAND Speed, Endurance
Move over, NAND flash memory. Santa Clara-based startup Crossbar, Inc. has developed a non-volatile memory technology based on resistive random-access memory.
2013年8月6日
Crossbar ReRAM Non-Volatile Memory Technology Unveiled
Emerging from stealth-mode, Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, unveiled its Crossbar Resistive RAM (ReRAM) technology.
2013年8月6日
Crossbar Emerges From Stealth, Packing 1TB Into a Single Chip
Start-up company Crossbar came out of stealth mode Monday with an announcement that it has created a new category of memory that is capable of storing 1TB of data on a single chip.
2013年8月6日
Crossbar Emerges from Stealth-Mode; Unveils Crossbar ReRAM Non-Volatile Memory Technology
Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, unveiled its Crossbar Resistive RAM (ReRAM) technology.
2013年8月6日
Crossbar Develops 1 Terabyte RAM on Chips Smaller Than a Postage Stamp
Crossbar has unveiled a new type of very high capacity and high-performance RAM, which can fit up to 1 Terabyte of memory on a single, stamp-sized chip.
2013年8月6日
Crossbar Details High Capacity Resistive RAM to Supersede Flash
Startup memory firm Crossbar has come out of stealth mode to disclose details of its Resistive RAM (ReRAM) technology, which it expects to deliver up to a terabyte (TB) of data capacity on a single chip with up to 20x the performance of existing flash memory.
2013年8月6日
Crossbar Creates Resistive RAM
Resistive RAM by Crossbar Technologies could well be the future of memory technology, rendering NAND insignificant.
2013年8月6日
Crossbar Claims Its Resistive RAM is Capable of Storing 1 Terabyte on a Single Chip, 20x Faster than NAND
It’s been quite the week for memory. Last Friday, we learned that Micron absorbed Elpida, and just earlier today, Samsung showed off its “3D” vertical NAND flash memory. Now, we have potentially the most interesting story of them all, coming to us from start-up Crossbar. The company claims that it has developed the world’s most advanced non-volatile memory, capable of storing up to 1TB on a single chip. Mind-blowing, to say the least.
2013年8月6日
Crossbar announced a new 1TB RAM
Crossbar announced a new 1TB RAM that will hold onto data even after the system is powered off.
2013年8月6日
5 Ways ReRAM Could Change Mobile
Crossbar says its emerging Resistive RAM technology rewrites the rules for storage and power consumption on mobile devices.
2013年8月6日
A Solution to Skimpy Storage is in Our Future
As we rely more on phones and tablets for our computing needs, it seems like we’re always running out of storage. Most mobile devices top out at 64GB, and while you might see a tablet with 128GB of 256GB of storage, that’s still a long way from the terabyte or more that you find on even the most basic laptops and desktops.
2013年8月6日
An In-depth Look at ReRAM: The Memory Technology Set to Replace NAND Flash
A new memory technology company, Crossbar, has broken cover with a new ReRAM design it claims will allow for the commercialisation of the technology. The company’s claims aren’t strictly theoretical; today’s announcement reveals that the design firm has successfully implemented the architecture in silicon. While that’s not the same as initiating mass production, it’s an important step in the search for a NAND flash replacement.
2013年8月6日
CMOS-compatible ReRAM Technology Looks to Boost Memory Capacity, Performance
Crossbar has shed light on its ReRAM (Resistive RAM) technology intended to significantly boost capacity and performance of standalone and embedded memory. According to the company, the new approach will deliver 20x faster write performance, 20x lower power consumption, and 10x the endurance at half the die size, compared to today’s best-in-class NAND Flash memory.
2013年8月5日
Startup's 'ReRAM' Tech Promises 1TB Memory for Mobile Devices
A California startup called Crossbar is working on an alternative to current NAND Flash memory chips like those used in mobile devices and other consumer electronics products which could serve up a terabyte of storage and playback capacity on “an IC smaller than a postage stamp.”
2013年8月5日
Start-up's non-volatile memory tech packs a terabyte per tiny layer
Memory-making start-up Crossbar came out of stealth mode on Monday, announcing that it has developed what it characterizes as “very high capacity and high-performance non-volatile memory” based on a new approach to resistive RAM (ReRAM) technology, and capable of storing one terabyte of data on a single-layer 200mm2 chip. That’s terabyte, not terabit.
2013年8月5日
Startup Pits ReRAM Against DRAM and Flash Storage
Startup Crossbar emerged from stealth mode Monday to announce its version of ReRAM (resistive random-access memory), a new type of memory that could be a successor to flash storage and DRAM.
2013年8月5日
Startup Crossbar Pits ReRAM Against DRAM and Flash Storage
Startup Crossbar emerged from stealth mode Monday to announce its version of ReRAM (resistive random-access memory), a new type of memory that could be a successor to flash storage and DRAM.
2013年8月5日
Startup Claims New Resistive RAM Design Can Store 1TB on a Chip
A startup is now emerging from stealth-mode with claims of a next-generation non-volatile memory that is easier to implement than other emerging technologies, according to Gigaom. The company in question, Crossbar, has made a demonstration array of its resistive RAM technology.
2013年8月5日
ReRAM, the Memory Tech That Will Eventually Replace NAND Flash, Finally Comes to Market
A new memory technology company, Crossbar, has broken cover with a new ReRAM design it claims will allow for commercialization of the technology.
2013年8月5日
ReRAM Startup Bets on Silver
A resistive RAM non-volatile memory technology that could be embedded in SoCs and used in multilayered terabyte memory ICs is being brought to market by a well-backed and well-connected startup called Crossbar Inc.
2013年8月5日
Crossbar Enters Race to Change Memory Chips
Several kinds of chips are used to store data, all of them good at some parts of that job but not others. A company called Crossbar has been quietly planning to disrupt a big chunk of that memory market.
2013年8月5日
New Resistive RAM Packs 1 TB of Storage Into a Single Chip
Crossbar Inc., a Californian start-up that’s relatively unknown in the storage market has unveiled a brand new form of storage technology, which they’re calling Resistive RAM (ReRAM). The technology allows for very high capacity and high performance non-volatile memory, capable of storing up to 1 TB of data on a 200 sq. mm chip that’s smaller than a postage stamp.
2013年8月5日
How Crossbar Wants to Jolt Memory Capacity and Cut Power Use
of stealth with a demonstration unit of resistive RAM that could present a viable next-generation alternative to NAND flash for devices and servers.
2013年8月5日
Flash Successor Announced
Flash, despite its vast success, is hardly an ideal storage medium - for one thing it gets slower and more fragile as it shrinks - so many expect resistance RAM - ReRAM - to win long term. Crossbar announces the first ReRAM that could replace flash.
2013年8月5日
Crossbar Unveils Resistive RAM with Simple, Three-layer Structure
Crossbar, Inc., a start-up company, unveiled a new Resistive RAM (ReRAM) technology that will be capable of storing up to one terabyte (TB) of data on a single 200mm2 chip. A working memory was produced array at a commercial fab, and Crossbar is entering the first phase of productization. “We have achieved all the major technical milestones that prove our ReRAM technology is easy to manufacture and ready for commercialization,” said George Minassian, chief executive officer, Crossbar, Inc. The company is backed by Artiman Ventures, Kleiner Perkins Caufield & Byers and Northern Light Venture Capital.
2013年8月5日
Crossbar Unveils ReRAM

Emerging from stealth-mode today, Californian start-up Crossbar unveils its Crossbar Resistive RAM (ReRAM) technology.

“Today’s non-volatile memory technologies are running out of steam, hitting significant barriers as they scale to smaller manufacturing processes,” says George Minassian, CEO of Crossbar, “with our working Crossbar array, we have achieved all the major technical milestones that prove our ReRAM technology is easy to manufacture and ready for commercialization.”

2013年8月5日
Crossbar Takes on DRAM and Flash Storage with Super Fast, Super Long-lasting ReRAM Tech
Startup Crossbar emerged from stealth mode Monday to announce its version of ReRAM (resistive random-access memory), a new type of memory that could be a successor to flash storage and DRAM.
2013年8月5日
Crossbar’s Resistive RAM Chips: The Successor to Flash?
Santa Clara-based startup Crossbar has just announced a potentially game-changing new memory chip that it claims has the potential to replace standard flash memory in a number of applications.
2013年8月5日
Crossbar’s ReRAM Technology Is 20 Times Faster Than NAND Flash
Crossbar is a California-based startup that emerged out of stealth mode to unveil their new Crossbar Resistive RAM (ReRAM) technology. ReRAM will be capable of storing up to 1TB of data on a 200mm2 die.
2013年8月5日
Crossbar Shakes Up Memory Market with New ReRAM
Now that Crossbar has come out of stealth mode, it is just a matter of time before one can see the impact of its ReRAM technology on the manufacturing design of mobile devices, certainly wearables. Analysts agreed that this is significant news in assessing the market outlook for memory and NAND flash.
2013年8月5日
Crossbar Says It Will Explode the $60B Flash Memory Market with Resistive RAM, Which Stores a Terabyte on a Chip
Crossbar is announcing today a new kind of memory chip that can replace flash memory, one of the fundamental building blocks of digital electronics, in a number of of applications.
2013年8月5日
Ram Memory Revolution Arrives with Crossbar's ReRam
Crossbar has managed to create an actual ReRam Ram Memory Module which would make current RAM Memorys look like clunky old hardware, effectively making them obsolete.
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