ReThink Non-Volatile Memory with 3D ReRAM
100x lower read latency and 1000x faster write performance than flash
CrossBar’s ReRAM technology is based on a simple device structure using CMOS-friendly materials and a standard manufacturing process. It can be easily integrated and manufactured into existing CMOS fabs. As it is a low-temperature back-end-of-line process integration, multiple layers of CrossBar ReRAM arrays can be monolithically integrated on top of CMOS logic wafers in between any metal routing layers.
Unlike NAND flash memory whose performance degrades as it shrinks to smaller process nodes, CrossBar’s ReRAM scaling does not impact the device performance and has the potential to scale below 10nm.
scaling → fewer electrons → performance degrade;
scaling → same nanofilament → better performance
Compared to traditional flash memory, CrossBar ReRAM offers much faster, bit-alterable, erase-free operation. It delivers 100x lower read latency and 1000x faster write performance than Flash, can be architected with smaller pages to reduce read and write latencies, lower energy and increased lifetime of the storage solutions.
In addition, the same technology used by CrossBar for Resistive RAM multiple time programmable (MTP), few-time programmable (FTP) and one-time programmable (OTP) non-volatile memories can be utilized for physically unclonable function (PUF) cryptographic keys for secure applications.
Read the “CrossBar ReRAM Technology” white paper to learn more:
ReRAM Advantages
ENERGY
- Retain data without power
- 5× lower energy than eFlash
- 20× lower energy than NAND
- 30× lower energy than SPI Flash
- 40× lower energy than Bluetooth low energy
PERFORMANCE
- 100× lower read latency
- 1000× faster write
- No erase needed
- 10 years retention at 85°C
- 1000× endurance
- −40°C ~ 125°C temperature
DENSITY
- 2× denser than 3D NAND
- Stackable, 3D cross-point arrays
- Capacity from Megabyte, Gigabyte to Terabyte
- Scalability to below 10nm