ReThink Data Storage with 3D ReRAM

Faster Access to Big Data

CrossBar Resistive RAM (ReRAM) High-Density Memory IP cores are an ideal choice for high-density, low-latency memory applications such as data center storage, mobile computing, consumer electronics and artificial intelligence. They offer high density, low latency, high performance and low power in a non-volatile memory solution.

CrossBar is enabling a new class of persistent memory solutions for read-intensive applications that benefit from the superior characteristics of CrossBar’s 3D ReRAM technologies.

Supported densities are from 64Gbits (8GBytes) or custom sizes, enabling 128GB NVDIMM to 1TB NV-DIMM with 8 chips per package. At system level, NV-DIMM read performance achieves 25.6 GB/s – 64 IOs – 250ns random read latency while consuming less than 1W active reads.

In addition to high-density non-volatile memory applications, CrossBar is also offering its high-density ReRAM technology for use in security applications, where the ReRAM cell is utilized for secure physical unclonable function (PUF) keys embedded in semiconductors.

Depending on the business model, the IP cores can be provided to customers as hard macros that can be integrated into SoC or FPGA devices or used as stand-alone memory chips.

Read the High-Density Memory product brief to learn more:

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High-Density Memory Key Characteristics:

High-Density Memory IP Cores are Ideal Memory Choices for Many Applications: