New chips promise faster computing
New computer chips that have instant-on capabilities found in tablet devices but also provide higher performance, will change the way people use personal computers, according to an industry analyst.
Continuing research in solid-state technologies are leading to the development of so-called magnetoresistive random access memory (MRAM) and resistive random access memory (ReRAM) chips that offer many advantages over conventional DRAM (dynamic random access memory) chips, according to Tom Coughlin, founder of Coughlin Associates, a data storage consulting firm.
DRAM chips store data using an electrical charge in each memory cell. Capacitors used in DRAM chips lose their charge over time and memory assemblies using DRAM must refresh all the cells in their chips approximately 20 times per second. As DRAM cell decrease in size their need to refresh increases.
New types of RAM could revolutionize your PC
New chips that blur the line between computer memory and storage are starting to move beyond niche applications and could change how we use PCs, an industry analyst said Sunday.
The chips would enable the same instant-on capability that’s common on tablets, but at much higher performance, said Tom Coughlin, founder of Coughlin Associates.
“We’re seeing the development of new solid-state storage technologies that are starting to play a role,” he said. “MRAM is one that we’re seeing playing a role providing a non-volatile memory technology, and there’s some talk about resistive RAM doing some things.” .
Top five solid-state flash storage news stories of 2013
What better to describe 2013 than "The Year of Flash"? This topic generated many of the year's top storage news stories, from advanced technology announcements to market changing acquisitions.
And that trend looks as if it will continue in 2014 as we move beyond the question of "Should I use flash in my data center?" to "Where should I use flash in my data center?" and "What kind of flash should I use?"
Analyzing the almost staggering amount of activity around flash during the past year, we've culled our top five flash story lines from 2013.
Apple Should Secure This Memory Technology Before Its Competition Does
What if I told you there was a non-volatile memory technology available that could fit one Terabyte "TB" of storage on a single chip smaller than a postage stamp, was 3D stackable for multiple Terabytes of storage, had 20x faster write speeds than NAND flash with 20x lower power consumption and 10x the durability. What if this memory technology was CMOS compatible making it relatively easy to manufacture at current foundries, had been successfully fabbed at a large commercial foundry, and was nearly ready for commercialization?
You would probably ask me for the ticker symbol and buy shares!
Well that technology is actually here, it is called Resistive Random Access Memory "ReRAM," and it is being developed by a private company called Crossbar, Inc. (sorry no ticker). The thesis for this article is Apple (AAPL) should buy Crossbar Inc. and secure the technology to drive increased demand and improved margins around Apple's iPads, iPhones, and iPods and to keep it out of its competitors' hands.
What Apple Should Buy Next: Crossbar Inc.
With Apple's big, fat piggy-bank flushed with cash it could easily buy up some of the biggest companies on the planet. So far, however, Apple's cash has been used to by smaller companies like its recent purchases of PrimeSense and Topsy , but as great as those two companies are SeekingAlpha is advising that there is one company that it should really buy and I agree totally.
That company is Crossbar, a company in the memory chip business and boy-oh, boy is this one company to remember. Crossbar has created a new and unique memory chip that blows everything else out of the water and one that could give Apple devices huge competitive advantages over its competition.
For one thing Crossbar's new non-volatile memory technology chips can pack a whopping terabyte of data in the size of a bloody postage stamp! Not only that but its stackable so you could have oodles of memory in a small fraction of the space than current technologies can.
EDN: The drive for SSDs: What’s holding back NAND flash?
By Hagop Nazarian and Sylvain Dubois, Crossbar.
CBS: Bay Area Company’s Chip Promises Big Leaps In Storage, Battery Life
By Allen Martin
SAN FRANCISCO (KPIX 5) — A tech company based in the Bay Area is on the verge of introducing a chip that could solve the biggest problems of today’s gadgets.
What’s After 3D NAND?
By Mark LaPedus
Planar NAND flash memory is on its last scaling legs, with 3D NAND set to become the successor to the ubiquitous 2D technology.
Samsung Electronics, for one, already has begun shipping the industry’s first 3D NAND device, a 24-level, 128-gigabit chip. In addition, Micron and SK Hynix shortly will ship their respective 3D NAND devices. But the Toshiba-SanDisk duo are the lone holdouts, as the joint venture partners will extend planar NAND as long as possible before rolling out a 3D NAND device in 2016.
Silver Finds New Niche in Memory Storage Market
By Charlotte McLeod - Exclusive to Silver Investing News
If you're a true silver buff, you likely know all about the metal's long history as a component of health-related applications. Likewise, if you've been watching the silver market for the past few months, you're likely aware that, moving forward, new solar power initiatives may play a role in driving silver prices.
What you may not know about is silver's up-and-coming use as an ingredient in memory storage devices.
ReRAM Challenges Flash Storage
By William Wong
Crossbar’s resistive RAM (ReRAM) joins magnetic and phase-change non-volatile memory technologies that are competing against the entrenched flash storage market. It will have lots of competition, but ReRAM’s features may put it ahead of the pack.
Storage Tech to Look Out For
Last month we saw some major developments in two storage technologies - Vertical NAND (V-NAND) and Resistive RAM (ReRAM) - which have the potential to change the way we view storage. We currently have two choices - spinning mechanical hard drives and flash based solid state drives (SSD). The spinning hard drives still offer the best cost per GB as compared to flash-based SSDs, but each of these technologies come with their own set of issues. Hard drives lack the speedy access times and low-power goodness offered by an SSD. The only way to currently get the best of both worlds - lower cost per GB and fast access times - is to invest in a hybrid .drive. But as far as SSDs are concerned, while the costs may have come down, they are still grappling with their own set of issues.
New Non-Volatile Memory for a New Era; Crossbar Announces their ReRAMs
Let's take ourselves back a few centuries, to a time when technology is rather more rough and ready. We still have silicon to work with, but no semiconductor fabs. And yet, being the aggressive can-do species that we are, we decide we want to build a large-scale non-volatile memory.
Big VC funding and new technology makes enterprise storage sexy. Really!
By Fritz Nelson
Crossbar is one of the more interesting companies betting on ReRAM. The company's CEO George Minassian says one of ReRAM's benefits is simplicity, because most chip fabs have the readily-available material to make them, and the architecture promises more upside, including greater reliability at smaller chip lithographies. Whereas traditional flash memory uses electrons to trap a charge, ReRAM uses metal ions. In the case of Crossbar, that metal is actually silver.
ReRAM – The End of NAND Flash
For over 50 years, both computers and mobile devices have depended upon NAND Flash as a memory module. It's high time it had a much needed replacement.
U Michigan Startup Develops ReRAM Prototype for Faster, More Efficient Mobile Device Memory
Crossbar, a University of Michigan (U-M) startup, has developed a working prototype of an advanced data storage technology that could revolutionize memory for mobile devices.
SSDs maturing, but new memory tech still 10 years away
Solid-state drive adoption will continue to grow and it will be more than 10 years before it is ultimately replaced by a new memory technology, experts said.
NAND Flash, What Comes Next?
The recent Flash Memory Summit in Santa Clara included some notable announcements.
Getting back to Basics: a Look at 3D NAND and 3D DRAM
There's been a lot of buzz around 3D NAND in the past few weeks, sparked by Samsung's recent announcement that it was commercializing its 3D VNAND technology.
DARPA invests $5.7 million in neural image processor research
By R. Colin Johnson
Wei Lu is also a cofounder of Crossbar Inc. (Santa Clara, Calif.), which uses migrating silver ions in amorphous silicon to create resistive random access memories (ReRAM). But for his DARPA contract, instead of silver, he is casting his memristors in tungsten oxide, which changes its resistance as oxygen vacancies migrate from one end of the memristor to the other — depending on which way the current is flowing — thus acting as a resistance-based memory element.