December 15, 2014

Crossbar breaks 3D storage barrier

3D is the memory chip buzzword du jour, because reducing feature sizes is expensive, while stacking memory cells up is much less so. Fabs can use older, stable processes to build larger capacity chips with less technical risk. Samsung has announced products using their 3D flash. But NAND flash is not the only memory technology that can benefit from 3D economics. Where speed and reliability are critical various forms of Resistance RAM (ReRAM or ReRAM) are starting to make inroads. Crossbar, a venture-backed startup in Silicon Valley, is pushing the 3D bandwagon even further.

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A terabyte on a postage stamp: ReRAM heads into commercialization

The makers of a new non-volatile RAM said the memory is ready to move from a prototype to a fabrication facility, where 1TB chips the size of a postage stamp will be produced and tested. Silicon Valley start-up Crossbar expects some of its 3D Restive RAM (3D ReRAM) products to be out in 2016 as memory in wearable devices, with high-density storage devices like solid-state drives arriving within 18 months after that.

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October 14, 2014

EE Times: Manufacturing ReRAM - Challenges & Opportunities

By Sundar Narayanan, Crossbar.

Resistive memory technologies involving simple two-terminal devices can be integrated into backend metal layers to provide an elegant solution for meeting density, capacity, and cost challenges.

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September 28, 2014

Seeking Alpha: Memristor To The Rescue?

By Chris Burniske, ARK Analyst

Imagine carrying the contents of your computer on a postage-stamp sized chip. Crossbar, a new Silicon Valley startup, is promising to deliver just that before 2020 using a new technology called resistive random-access memory (ReRAM).

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August 17, 2014

Emerging Solid State Storage And Higher Endurance Flash

by Tom Coughlin

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July 15, 2014

EE Times Silicon 60: Hot Startups to Watch

By Peter Clarke

It has been more than 18 months since EE Times last produced a version of the Silicon 60. The global economic, entrepreneurial, and electronics business climates have all improved in that time, and EE Times has brought 38 recently formed companies on to version 15.1 of its list of 60 firms that we feel are worth keeping an eye on.

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July 2, 2014

Crossbar preps ReRAM tech for 1TB

By Janine Love

Crossbar has recently demonstrated pre-production 1MB arrays using its patented 1 transistor driving n resistive memory cells (1TnR) non-volatile resistive RAM (ReRAM or ReRAM) for read/write operations. The company feels this is a major milestone toward commercialising terabyte-scale memory arrays on a postage-stamp-sized chip.

At its basic level, ReRAM includes a layer of electrically insulating active material between two electrodes. Applying voltage results in the formation of a conducting filament between the two electrodes (or metal layers). Applying reverse voltage then removes the filament.

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July 2, 2014

Crossbar ReRAM Tweaks Nonvolatile Memory

By Jim Turley

I gotta say, memory chips are boring.

And that's coming from a guy who lives and works in the chip business. Sure, I can get all excited about microprocessor chips. I can generally keep my eyes open through a discussion of interface chips. I've even been known to nod occasionally when the topic turns to cryptography chips. But memory? Give me some toothpicks for my eyelids.

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July 1, 2014

Crossbar ReRAM Aims for 1TB

By Janine Love

Yesterday, Crossbar announced it had demonstrated pre-production 1 megabyte arrays using its patented 1TnR (1 transistor driving n resistive memory cells) non-volatile resistive RAM (ReRAM or ReRAM) for read/write operations. The company feels this is a major milestone toward commercializing terabyte-scale memory arrays on a postage-stamp-sized chip. Last week, I spoke to Dr. Tanmay Kumar, vice president of device engineering at Crossbar, about the latest developments.

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July 1, 2014

New research: Flash is DEAD. Yet resistance isn't futile - it's key

By Chris Mellor

Flash is at a crossroads. It cannot keep shrinking dies because, beyond a certain point, NAND cells produce too many errors, are slower to respond and have a shortened working life. Yet a University of Michigan professor's research may hold the key to the future of flash storage technology.

Flash foundry suppliers are working on vertical layer stacking to cram more cells at current geometries onto the same die footprint. This is exemplified by Samsung's V-NAND.

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June 30, 2014

Crossbar’s Resistive RAM claims milestone, but future ship date remains unclear

By Carol Sliwa

Many enterprises are still getting a handle on the best ways to use NAND flash, but they can already scope out some of the potential successors to the solid-state storage technology.

Crossbar Inc. specializes in non-volatile 3D Resistive RAM (ReRAM), which promises greater endurance and higher density than NAND flash. The Santa Clara, California-based startup claims that it reached an important milestone toward commercializing terabyte-scale memory arrays that can use a chip the size of a postage stamp.

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June 30, 2014

Crossbar shows ultra-dense ReRAM architecture

By Robin Harris

Crossbar, the resistance RAM (ReRAM) startup, opened the kimono a little wider today with the announcement of their “1TnR” architecture, which they have implemented on pre-production test chips.

Unpacking 1TnR: 1 Transistor drives n number of ReRAM cells. How many? They report that a single transistor can drive over 2,000 memory cells at very low power and super density.

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June 30, 2014

Crossbar Has 1Mb ReRAM

By David Manners

Crossbar, the four year-old Santa Clara resistive RAM (ReRAM) start-up, has demonstrated pre-production 1Mb arrays. The array uses Crossbar's using its patented "1TnR" (1 Transistor driving n Resistive memory cells) technology which makes it possible for a single transistor to manage a very large number of interconnected memory cells, enabling very high capacity solid-state storage.

Other memories utilising passive cross-point architectures, such as Resistive RAM, PCM (Phase Change Memory) and neuromorphic systems, experience unintended electrical current when accessing high density storage due to "sneak path current." .

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Flash storage faces challenge from Crossbar's ReRAM

By Agam Shah

The hunt for memory technology to replace NAND flash storage within the next 10 years is under way, and startup Crossbar is planning to bringing its version of ReRAM (resistive random-access memory) technology to market next year. ReRAM, a form of nonvolatile memory that is not available commercially yet, will be cheaper, smaller and more power-efficient than NAND flash, which is being used in solid-state drives and mobile flash drives, said Tanmay Kumar, vice president of device engineering at Crossbar.

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June 30, 2014

Crossbar's new ReRAM tech challenges flash storage

By Agam Shah

The hunt for memory technology to replace NAND flash storage within the next 10 years is under way, and startup Crossbar is planning to bringing its version of ReRAM (resistive random-access memory) technology to market next year. ReRAM, a form of nonvolatile memory that is not available commercially yet, will be cheaper, smaller and more power-efficient than NAND flash, which is being used in solid-state drives and mobile flash drives, said Tanmay Kumar, vice president of device engineering at Crossbar.

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June 30, 2014

Addressing Scheme Enables Terabyte Memories, Says Crossbar

By Peter Clarke

Resistive RAM startup Crossbar Inc. (Santa Clara, Calif.) has announced it has demonstrated the viability of its so-called 1TnR selector circuit for read/write operations.

1TnR uses a single select transistor to access a number of interconnected memory cells, enabling high capacity solid-state storage, Crossbar said. Crossbar has used to the technique to access up to 2,000 memory cells and intends to use the technology to create terabyte non-volatile memories on a single chip. The 1TnR ReRAM has been validated in silicon using a 1 Megabyte storage device for embedded code applications, the company said.

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April 15, 2014

Electronic Products: Nano-particules to the rescue for handling zettabytes of data

By Sylvain Dubois, Crossbar.

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April 9, 2014

Chip Design: Overcoming Challenges in 3D Architecture Memory Production

By Sundar Narayanan, Crossbar.

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April 8, 2014

Pulse EEWeb: Crossbar - Pioneering a New Type of Memory

By George Minassian, Crossbar.

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February 11, 2014

EE Times: ReRAM - A New Approach to Embedded Memory

By Sylvain Dubois, Crossbar.

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