News & Events

Crossbar Unveils Another Breakthrough Innovation Behind its Ultra-High Density 3D RRAM Solutions at IEDM 2014

December 15, 2014

Achieving another major milestone needed to bring terabyte storage-on-a-chip to market, Crossbar, Inc., a start-up company pioneering 3D Resistive RAM (RRAM) non-volatile technology, today disclosed it has solved one of the greatest challenges facing developers in achieving ultra-high density RRAM. In a technical presentation at today’s IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, the company unveiled its approach to suppressing the sneak path current that interferes with reliable reading of data from individual memory cells, one of the most challenging hurdles RRAM developers are currently facing. Without the ability to suppress this sneak path current, RRAM developers are unable to deliver the high-density 3D memories arrays needed to make terabyte storage-on-a-chip possible.

Crossbar to Demonstrate Breakthrough Resistive RRAM Innovation at IEDM 2014

December 08, 2014

Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will be disclosing another major technology breakthrough in their development of Resistive RAM (RRAM) at next week’s IEEE International Electron Devices Meeting (IEDM). Continuing to meet key technological milestones, the company first unveiled its RRAM technology in August 2013 and then demonstrated pre-production 1MB arrays using Crossbar’s patented “1TnR” technology for read/write operations in June 2014.

Crossbar RRAM Technology to be Featured at Flash Memory Summit 2014

July 29, 2014

Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, will feature its RRAM technology across three panel presentations during next week’s Flash Memory Summit 2014 at the Santa Clara Convention Center in Santa Clara, CA. Presentations will cover new developments in RRAM technology as well as the applicability of RRAM to new markets including the Internet of Things. In addition, Crossbar will discuss developments in 3D NAND and how RRAM breaks through the barriers in scaling 3D Flash to high densities in high volume.

Crossbar Unveils Major Technical Innovation Behind Terabyte Storage-on-a-Chip

June 30, 2014

Crossbar, Inc., a start-up company pioneering 3D Resistive RAM (RRAM) technology, today disclosed further details behind its revolutionary non-volatile RRAM technology. The company announced it has demonstrated pre-production 1MB arrays using its patented “1TnR” (1 Transistor driving n Resistive memory cells) selectivity for read/write operations, representing a critical milestone toward commercializing terabyte scale memory arrays on a postage stamp size chip.

Crossbar, Inc. Names Ron Richter VP of Sales

June 16, 2014

Crossbar, Inc., a start-up pioneering Resistive RAM (RRAM) technology, today announced that semiconductor industry veteran Ron Richter joined the company as vice president of sales. Heading up Crossbar’s new sales organization, Richter will be responsible for driving the company’s global sales strategy and organization as it readies its technology to go to market.

Crossbar Closes Series C Funding of $25M

March 31, 2014

Crossbar, Inc., a start-up company pioneering Resistive RAM (RRAM) technology, today announced it has completed a $25 million Series C funding in an oversubscribed round. Participating in the round were Crossbar’s existing investors Artiman Ventures, Kleiner Perkins Caufield & Byers, Northern Light Venture Capital and the University of Michigan. In addition, new investors included SAIF Partners, Korea Investment Partners, CBC-Capital and Nick and Joby Pritzker through their family’s firm, Tao Invest, validating the mass-market opportunity and global appeal of the Crossbar technology.

Crossbar to Present Newly-Unveiled RRAM Technology at Flash Memory Summit 2013

August 13, 2013

Speaking at an industry conference for the first time, Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will present at Flash Memory Summit on Wednesday, August 14, 2013, in Santa Clara, CA. Vice President of Engineering and co-Founder Hagop Nazarian, will speak about the company’s Resistive RAM (RRAM)-based technology, creating a new generation of non-volatile memory. Crossbar’s RRAM is capable of storing up to one terabyte (TB) of data on a single 200mm2 chip, and its structure is simple enough to stack onto logic in 3D on the latest technology node, using standard CMOS processes, in existing fabs. Read More

Crossbar Emerges from Stealth-Mode

August 05, 2013

Working Array Validates Manufacturability and Simplicity of Crossbar Resistive RAM

Emerging from stealth-mode today, Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, unveiled its Crossbar Resistive RAM (RRAM) technology. This new generation of non-volatile memory will be capable of storing up to one terabyte (TB) of data on a single 200mm2 chip, enabling massive amounts of information, such as 250 hours of HD movies, to be stored and played back from an IC smaller than a postage stamp. Crossbar today also announced it has developed a working Crossbar memory array at a commercial fab, a major milestone in the development of new memory technology, signaling its readiness to begin the first phase of productization. Read More

December 15, 2014

Crossbar Demonstrates Breakthrough Resistive RRAM at IEDM 2014

Start-up company Crossbar announced today at IEEE International Electron Devices Meeting (IEDM) a breakthrough in 3D RRAM architecture that could allow the development of a 1TB RRAM memory chips that have the size of a postage stamp. Presented by Dr. Sung Hyun Jo, Crossbar senior fellow, the presentation discussed how to overcome a common design challenge in high-density RRAM development, and described how a Field Assisted Superlinear Threshold (FAST) selector device can successfully suppress the sneak path current inherent in RRAM memory, another milestone needed to commercialize RRAM memory for high-density data applications. Read more.

December 15, 2014

"Sneak Path" Breakthrough Heralds Arrival Of Ultra-High Density Resistive Memory

Contributed Article by Crossbar’s Sung Hyun Jo, Ph.D.,

As floating-gate flash memory technologies used in the majority of products on the market today quickly approach the limits of their ability to scale to higher densities, it has become widely recognized that a new non-volatile memory technology is needed to replace them. Resistive random-access memory (RRAM) is widely hailed as the “most likely to succeed” in the race to replace today’s flash memory with a new, more scalable, higher-capacity, higher-performance and more reliable non-volatile memory. While many companies are actively pursuing RRAM technologies, however, the road to creating commercially viable RRAM products has not been easy. Read more.

December 15, 2014

Crossbar breaks 3D storage barrier

3D is the memory chip buzzword du jour, because reducing feature sizes is expensive, while stacking memory cells up is much less so. Fabs can use older, stable processes to build larger capacity chips with less technical risk. Samsung has announced products using their 3D flash. But NAND flash is not the only memory technology that can benefit from 3D economics. Where speed and reliability are critical various forms of Resistance RAM (RRAM or ReRAM) are starting to make inroads. Crossbar, a venture-backed startup in Silicon Valley, is pushing the 3D bandwagon even further. Read more.

December 15, 2014

A terabyte on a postage stamp: RRAM heads into commercialization

The makers of a new non-volatile RAM said the memory is ready to move from a prototype to a fabrication facility, where 1TB chips the size of a postage stamp will be produced and tested. Silicon Valley start-up Crossbar expects some of its 3D Restive RAM (3D RRAM) products to be out in 2016 as memory in wearable devices, with high-density storage devices like solid-state drives arriving within 18 months after that. Read more.

December 15, 2014

Crossbar gets around a nasty obstacle to dense 3D memory chips

Creating 3D memory chips isn’t too hard. But packing the memory cells so they contain a lot of dense storage is a problem that has bedeviled chip makers for a while. But memory chip startup Crossbar says it has figured out a way to create 3D structures with a lot of densely packed circuitry. Read more.

October 14, 2014

EE Times: Manufacturing RRAM - Challenges & Opportunities

By Sundar Narayanan, Crossbar.

Resistive memory technologies involving simple two-terminal devices can be integrated into backend metal layers to provide an elegant solution for meeting density, capacity, and cost challenges. Read more.

Please visit our Media Coverage Archive for additional coverage reports.

Media Resources

Crossbar Fact Sheet Crossbar Fact Sheet
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Crossbar Industry Response Crossbar Industry Response
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Crossbar Resistive Memory: The Future Technology for NAND Flash Crossbar Resistive Memory: The Future Technology for NAND Flash
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Crossbar Technology – Real time TEM visualization of filament formation

8/5/2013

Crossbar Corporate Logo Crossbar Corporate Logo
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George Minassian, CEO George Minassian, CEO
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Crossbar RRAM Technology - Simple Implementation for Low-Cost Manufacturability Crossbar RRAM Technology – Simple Implementation for Low-Cost Manufacturability
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Crossbar RRAM Technology - CMOS Compatible for Easy Integration Crossbar RRAM Technology – CMOS Compatible for Easy Integration
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Crossbar RRAM Technology - Half the Die Size of Traditional NAND Crossbar RRAM Technology – Half the Die Size of Traditional NAND
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Crossbar RRAM Technology - Simple CMOS Integration Crossbar RRAM Technology – Simple CMOS Integration
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Crossbar Technology - Breakthrough Performance, High Capacity, Low Power Consumption Crossbar Technology – Breakthrough Performance, High Capacity, Low Power Consumption
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Crossbar Technology - High Capacity, High-Performance Non-Volatile Memory Crossbar Technology – High Capacity, High-Performance Non-Volatile Memory
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Crossbar Technology - Optimized Memory Cell and Array Architectures Crossbar Technology – Optimized Memory Cell and Array Architectures
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Crossbar Technology - Super Dense Memory Array Architecture Crossbar Technology – Super Dense Memory Array Architecture
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Crossbar Technology - Highest Packing Density of RRAM Crossbar Technology – Highest Packing Density of RRAM
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Crossbar Technology - Super Dense Cross-Point Memory Architecture Crossbar Technology – Super Dense Cross-Point Memory Architecture
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