100X lower read latency than NAND, 20X faster write than NAND without any block erase design constraints and timing limitations
Up to 1TB of data storage on a single chip, 3D stackable and scalable to sub-10nm
Memory is everywhere, but with the explosion of data driven by the Internet of Things and cloud-based storage and services, a new approach to memory technology is needed. Get a glimpse of what Crossbar RRAM can deliver to revolutionize storage innovation.
Stream and access your entire library of high-definition videos and games with super-dense, and fast storage
Enable high-speed computing and big data analytics while reducing energy costs with denser rack space and ultra low latency solid-state drives
Ensure reliable, fast and secure access to critical machine, sensor and car data across a wide temperature range
Connect a wide range of extremely integrated devices and sensors to store and share information, all while lasting years on a single battery charge
Enjoy faster web queries and content creation with any cloud-based application or data
The global next generation memory market that is expected to reach USD 3.43 billion by 2020 scrutinized in new research
"RRAM is widely considered the obvious leader in the battle for a next generation memory and Crossbar is the company most advanced, showing a working demo that proves the manufacturability of RRAM. This is a significant development in the industry, as it provides a clear path to commercialization of a new storage technology, capable of changing the future landscape of electronics innovation. "
"Ninety percent of the data we store today was created in the past two years. The creation and instant access of data has become an integral part of the modern experience, continuing to drive dramatic growth for storage for the foreseeable future. However, the current storage medium, planar NAND, is seeing challenges as it reaches the lower lithographies, pushing against physical and engineering limits. The next generation non-volatile memory, such as Crossbar's RRAM, would bypass those limits, and provide the performance and capacity necessary to become the replacement memory solution."
Senior Principal Analyst, Memory and Storage
"We are thrilled to see Crossbar achieve a significant industry milestone and produce its first working array in CMOS production facility. We are one step closer to achieving our goal of commercializing a completely new class of memory using a much simpler cell structure than traditional flash alternatives. Artiman is excited to continue working with Crossbar to revolutionize the memory industry."
"Without an effective way to suppress the sneak path current, high-density 3D RRAM has been technically unachievable. Crossbar's selector is the first solution to overcome this design challenge, paving the way for terabyte storage-on-a-chip to become a reality and positioning RRAM as the leading next generation NAND memory replacement."
Founder and CEO
"When Crossbar first emerged from stealth-mode, there was no question that flash memory was running out of steam and the industry had set its sights on RRAM as the next generation technology with the most promise for high density non-volatile memory. Since then, the company has achieved major technical advances and with this announcement, we now have silicon proof of Crossbar RRAM technology and can see a potential path towards the commercialization of a next generation storage technology."
Founder, President and Principal Analyst
"Crossbar came out of stealth mode with a fascinating new alternative memory technology. Key to their solution is the selection device built into the cell. Other RRAM technologies use an external device that can introduce noise problems. With this, Crossbar appears to have an important advantage."